Toshiba Semiconductor and Storage - TK12A60D(STA4,Q,M)

KEY Part #: K6418569

TK12A60D(STA4,Q,M) Verðlagning (USD) [68442stk lager]

  • 1 pcs$0.60901
  • 2,500 pcs$0.60598

Hlutanúmer:
TK12A60D(STA4,Q,M)
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
MOSFET N-CH 600V 12A TO-220SIS.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Stakur, Díóða - Bríta leiðréttingar, Díóða - leiðréttingar - stakir and Transistors - JFETs ...
Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage TK12A60D(STA4,Q,M) electronic components. TK12A60D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK12A60D(STA4,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK12A60D(STA4,Q,M) Vörueiginleikar

Hlutanúmer : TK12A60D(STA4,Q,M)
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : MOSFET N-CH 600V 12A TO-220SIS
Röð : π-MOSVII
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 12A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 550 mOhm @ 6A, 10V
Vgs (th) (Max) @ kt : 4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 1800pF @ 25V
FET lögun : -
Dreifing orku (Max) : 45W (Tc)
Vinnuhitastig : 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-220SIS
Pakki / mál : TO-220-3 Full Pack