Infineon Technologies - IRFR13N20DPBF

KEY Part #: K6411480

IRFR13N20DPBF Verðlagning (USD) [8477stk lager]

  • 3,000 pcs$0.24466

Hlutanúmer:
IRFR13N20DPBF
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 200V 13A DPAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - SCR, Thyristors - DIACs, SIDACs and Díóða - leiðréttingar - fylki ...
Samkeppnisforskot:
We specialize in Infineon Technologies IRFR13N20DPBF electronic components. IRFR13N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFR13N20DPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR13N20DPBF Vörueiginleikar

Hlutanúmer : IRFR13N20DPBF
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 200V 13A DPAK
Röð : HEXFET®
Hluti staða : Discontinued at Digi-Key
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 13A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 235 mOhm @ 8A, 10V
Vgs (th) (Max) @ kt : 5.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 830pF @ 25V
FET lögun : -
Dreifing orku (Max) : 110W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D-Pak
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

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