TPN4R712MD,L1Q Verðlagning (USD) [342569stk lager]
- 1 pcs$0.11510
- 5,000 pcs$0.11453
- Hlutanúmer:
- TPN4R712MD,L1Q
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET P-CH 20V 36A 8TSON ADV.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs, Transistors - Forritanleg sameining, Thyristors - DIACs, SIDACs, Transistors - IGBTs - mát, Díóða - RF, Thyristors - SCRs - mát and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TPN4R712MD,L1Q electronic components. TPN4R712MD,L1Q can be shipped within 24 hours after order. If you have any demands for TPN4R712MD,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN4R712MD,L1Q Vörueiginleikar
Hlutanúmer :
TPN4R712MD,L1Q
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET P-CH 20V 36A 8TSON ADV
Röð :
U-MOSVI
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
36A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
4.7 mOhm @ 18A, 4.5V
Vgs (th) (Max) @ kt :
1.2V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
65nC @ 5V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
4300pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
42W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-TSON Advance (3.3x3.3)
Pakki / mál :
8-PowerVDFN
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