SIRA10BDP-T1-GE3 Verðlagning (USD) [274892stk lager]
- 1 pcs$0.13455
- Hlutanúmer:
- SIRA10BDP-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 30V.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - Arrays, Transistors - sérstök tilgangur, Transistors - IGBTs - mát, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Single and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIRA10BDP-T1-GE3 electronic components. SIRA10BDP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIRA10BDP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIRA10BDP-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIRA10BDP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 30V
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
30A (Ta), 60A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
36.2nC @ 10V
Vgs (hámark) :
+20V, -16V
Inntaksrýmd (Ciss) (Max) @ Vds :
1710pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
5W (Ta), 43W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
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