[1343stk lager]
- Hlutanúmer:
- SIE836DF-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 200V 18.3A POLARPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Díóða - breytileg getu, Díóða - leiðréttingar - fylki, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Forritanleg sameining, Díóða - RF and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIE836DF-T1-GE3 electronic components. SIE836DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE836DF-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIE836DF-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIE836DF-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 200V 18.3A POLARPAK
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
18.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 4.1A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
1200pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
5.2W (Ta), 104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
10-PolarPAK® (SH)
Pakki / mál :
10-PolarPAK® (SH)
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