BSC026N08NS5ATMA1 Verðlagning (USD) [67680stk lager]
- 1 pcs$0.59559
- 5,000 pcs$0.59262
- Hlutanúmer:
- BSC026N08NS5ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 80V 23A 8TDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Stakur, Transistors - IGBTs - mát, Transistors - IGBTs - Single, Transistors - Forritanleg sameining, Thyristors - DIACs, SIDACs and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC026N08NS5ATMA1 electronic components. BSC026N08NS5ATMA1 can be shipped within 24 hours after order. If you have any demands for BSC026N08NS5ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC026N08NS5ATMA1 Vörueiginleikar
Hlutanúmer :
BSC026N08NS5ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 80V 23A 8TDSON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
23A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.6 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 115µA
Hliðargjald (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
6800pF @ 40V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 156W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
Nýjustu fréttir
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