[1208stk lager]
- Hlutanúmer:
- IRFH5302DTR2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 29A 8VQFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Díóða - leiðréttingar - stakir, Kerfisstjóratæki, Transistors - IGBTs - Single, Díóða - Bríta leiðréttingar, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - RF and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFH5302DTR2PBF electronic components. IRFH5302DTR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH5302DTR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5302DTR2PBF Vörueiginleikar
Hlutanúmer :
IRFH5302DTR2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 29A 8VQFN
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
29A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.5 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
2.35V @ 100µA
Hliðargjald (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3635pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
3.6W (Ta), 104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PQFN (5x6) Single Die
Pakki / mál :
8-PowerVDFN
Nýjustu fréttir
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