IPD65R420CFDBTMA1 Verðlagning (USD) [106812stk lager]
- 1 pcs$0.34628
- 2,500 pcs$0.31768
- Hlutanúmer:
- IPD65R420CFDBTMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 650V 8.7A TO252.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, forspeglast, Kerfisstjóratæki and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD65R420CFDBTMA1 electronic components. IPD65R420CFDBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R420CFDBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R420CFDBTMA1 Vörueiginleikar
Hlutanúmer :
IPD65R420CFDBTMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 650V 8.7A TO252
Röð :
CoolMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8.7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
420 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 340µA
Hliðargjald (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
870pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
83.3W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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