IRFD113PBF Verðlagning (USD) [39129stk lager]
- 1 pcs$0.99926
- 2,500 pcs$0.43461
- Hlutanúmer:
- IRFD113PBF
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 60V 800MA 4-DIP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - JFETs, Thyristors - SCRs - mát, Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - Single, Transistors - sérstök tilgangur, Díóða - RF and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix IRFD113PBF electronic components. IRFD113PBF can be shipped within 24 hours after order. If you have any demands for IRFD113PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD113PBF Vörueiginleikar
Hlutanúmer :
IRFD113PBF
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 60V 800MA 4-DIP
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
800mA (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
800 mOhm @ 800mA, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
200pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
1W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
4-HVMDIP
Pakki / mál :
4-DIP (0.300", 7.62mm)
Nýjustu fréttir
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