Vishay Siliconix - SIR404DP-T1-GE3

KEY Part #: K6411801

SIR404DP-T1-GE3 Verðlagning (USD) [96888stk lager]

  • 1 pcs$0.40559
  • 3,000 pcs$0.40357

Hlutanúmer:
SIR404DP-T1-GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CH 20V 60A PPAK SO-8.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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Fjölskylduflokkar:
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Samkeppnisforskot:
We specialize in Vishay Siliconix SIR404DP-T1-GE3 electronic components. SIR404DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR404DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIR404DP-T1-GE3 Vörueiginleikar

Hlutanúmer : SIR404DP-T1-GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CH 20V 60A PPAK SO-8
Röð : TrenchFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 60A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 2.5V, 10V
Rds On (Max) @ Id, Vgs : 1.6 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt : 1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 97nC @ 4.5V
Vgs (hámark) : ±12V
Inntaksrýmd (Ciss) (Max) @ Vds : 8130pF @ 10V
FET lögun : -
Dreifing orku (Max) : 6.25W (Ta), 104W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PowerPAK® SO-8
Pakki / mál : PowerPAK® SO-8

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