BSC196N10NSGATMA1 Verðlagning (USD) [194119stk lager]
- 1 pcs$0.19054
- 5,000 pcs$0.18290
- Hlutanúmer:
- BSC196N10NSGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 100V 45A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Díóða - leiðréttingar - stakir, Díóða - breytileg getu, Transistors - IGBTs - mát, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC196N10NSGATMA1 electronic components. BSC196N10NSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC196N10NSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC196N10NSGATMA1 Vörueiginleikar
Hlutanúmer :
BSC196N10NSGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 100V 45A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8.5A (Ta), 45A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
19.6 mOhm @ 45A, 10V
Vgs (th) (Max) @ kt :
4V @ 42µA
Hliðargjald (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2300pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
78W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8
Pakki / mál :
8-PowerTDFN
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