Vishay Siliconix - SIHB24N65E-GE3

KEY Part #: K6392613

SIHB24N65E-GE3 Verðlagning (USD) [14255stk lager]

  • 1 pcs$2.89099
  • 10 pcs$2.58162
  • 100 pcs$2.11677
  • 500 pcs$1.71405
  • 1,000 pcs$1.44558

Hlutanúmer:
SIHB24N65E-GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CH 650V 24A D2PAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Díóða - leiðréttingar - fylki, Transistors - JFETs, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Díóða - leiðréttingar - stakir and Transistors - sérstök tilgangur ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SIHB24N65E-GE3 electronic components. SIHB24N65E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB24N65E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHB24N65E-GE3 Vörueiginleikar

Hlutanúmer : SIHB24N65E-GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CH 650V 24A D2PAK
Röð : -
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 24A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 145 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 2740pF @ 100V
FET lögun : -
Dreifing orku (Max) : 250W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D2PAK
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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