[1513stk lager]
- Hlutanúmer:
- IRFH5220TR2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 200V 3.8A PQFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Smára - tvíhverfa (BJT) - fylki, Thyristors - TRIACs, Transistors - JFETs, Transistors - sérstök tilgangur, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - RF and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFH5220TR2PBF electronic components. IRFH5220TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH5220TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5220TR2PBF Vörueiginleikar
Hlutanúmer :
IRFH5220TR2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 200V 3.8A PQFN
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.8A (Ta), 20A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99.9 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ kt :
5V @ 100µA
Hliðargjald (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1380pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
3.6W (Ta), 8.3W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PQFN (5x6)
Pakki / mál :
8-VQFN Exposed Pad
Nýjustu fréttir
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