[745stk lager]
- Hlutanúmer:
- IRF6712STR1PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 17A DIRECTFET.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - sérstök tilgangur, Transistors - Forritanleg sameining, Díóða - Zener - Stakur, Transistors - FETs, MOSFETs - Single and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF6712STR1PBF electronic components. IRF6712STR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6712STR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6712STR1PBF Vörueiginleikar
Hlutanúmer :
IRF6712STR1PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 17A DIRECTFET
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
17A (Ta), 68A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.9 mOhm @ 17A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 50µA
Hliðargjald (Qg) (Max) @ Vgs :
18nC @ 4.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1570pF @ 13V
FET lögun :
-
Dreifing orku (Max) :
2.2W (Ta), 36W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DIRECTFET™ SQ
Pakki / mál :
DirectFET™ Isometric SQ
Nýjustu fréttir
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