[1989stk lager]
- Hlutanúmer:
- IRFH7110TR2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N CH 100V 11A PQFN5X6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - leiðréttingar - fylki, Díóða - Zener - Stakur, Kerfisstjóratæki, Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - Arrays and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFH7110TR2PBF electronic components. IRFH7110TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH7110TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH7110TR2PBF Vörueiginleikar
Hlutanúmer :
IRFH7110TR2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N CH 100V 11A PQFN5X6
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11A (Ta), 58A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 35A, 10V
Vgs (th) (Max) @ kt :
4V @ 100µA
Hliðargjald (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3240pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
3.6W (Ta), 104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-PQFN (5x6)
Pakki / mál :
8-TQFN Exposed Pad
Nýjustu fréttir
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