Infineon Technologies - SPD30P06PGBTMA1

KEY Part #: K6417099

SPD30P06PGBTMA1 Verðlagning (USD) [137238stk lager]

  • 1 pcs$0.26951

Hlutanúmer:
SPD30P06PGBTMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET P-CH 60V 30A TO252-3.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
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Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - mát, Díóða - RF, Transistors - sérstök tilgangur, Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast and Thyristors - SCR ...
Samkeppnisforskot:
We specialize in Infineon Technologies SPD30P06PGBTMA1 electronic components. SPD30P06PGBTMA1 can be shipped within 24 hours after order. If you have any demands for SPD30P06PGBTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPD30P06PGBTMA1 Vörueiginleikar

Hlutanúmer : SPD30P06PGBTMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET P-CH 60V 30A TO252-3
Röð : SIPMOS®
Hluti staða : Active
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 30A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 75 mOhm @ 21.5A, 10V
Vgs (th) (Max) @ kt : 4V @ 1.7mA
Hliðargjald (Qg) (Max) @ Vgs : 48nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1535pF @ 25V
FET lögun : -
Dreifing orku (Max) : 125W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO252-3
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

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