[3236stk lager]
- Hlutanúmer:
- IXFM67N10
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- POWER MOSFET TO-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Díóða - RF, Díóða - leiðréttingar - fylki, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in IXYS IXFM67N10 electronic components. IXFM67N10 can be shipped within 24 hours after order. If you have any demands for IXFM67N10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFM67N10 Vörueiginleikar
Hlutanúmer :
IXFM67N10
Framleiðandi :
IXYS
Lýsing :
POWER MOSFET TO-3
Röð :
HiPerFET™
Hluti staða :
Last Time Buy
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
67A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 33.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 4mA
Hliðargjald (Qg) (Max) @ Vgs :
260nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4500pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
300W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-204AE
Pakki / mál :
TO-204AE
Nýjustu fréttir
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