[2625stk lager]
- Hlutanúmer:
- GP2M002A065CG
- Framleiðandi:
- Global Power Technologies Group
- Nákvæm lýsing:
- MOSFET N-CH 650V 1.8A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - RF, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Smára - tvíhverfa (BJT) - fylki and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Global Power Technologies Group GP2M002A065CG electronic components. GP2M002A065CG can be shipped within 24 hours after order. If you have any demands for GP2M002A065CG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP2M002A065CG Vörueiginleikar
Hlutanúmer :
GP2M002A065CG
Framleiðandi :
Global Power Technologies Group
Lýsing :
MOSFET N-CH 650V 1.8A DPAK
Röð :
-
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.6 Ohm @ 900mA, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
8.5nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
353pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
52W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D-Pak
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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