Toshiba Semiconductor and Storage - RN1905FE,LF(CT

KEY Part #: K6529288

RN1905FE,LF(CT Verðlagning (USD) [1936260stk lager]

  • 1 pcs$0.01910

Hlutanúmer:
RN1905FE,LF(CT
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
TRANS 2NPN PREBIAS 0.1W ES6.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - Arrays, Díóða - breytileg getu, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Bríta leiðréttingar and Thyristors - DIACs, SIDACs ...
Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage RN1905FE,LF(CT electronic components. RN1905FE,LF(CT can be shipped within 24 hours after order. If you have any demands for RN1905FE,LF(CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1905FE,LF(CT Vörueiginleikar

Hlutanúmer : RN1905FE,LF(CT
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : TRANS 2NPN PREBIAS 0.1W ES6
Röð : -
Hluti staða : Active
Transistor Type : 2 NPN - Pre-Biased (Dual)
Núverandi - Safnari (Ic) (Max) : 100mA
Spenna - sundurliðun útsendara (hámark) : 50V
Viðnám - stöð (R1) : 2.2 kOhms
Viðnám - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Núverandi - Úrskurður safnara (Max) : 500nA
Tíðni - umskipti : 250MHz
Afl - Max : 100mW
Festingargerð : Surface Mount
Pakki / mál : SOT-563, SOT-666
Birgir tæki pakki : ES6

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