IXTH12N100 Verðlagning (USD) [7477stk lager]
- 1 pcs$6.36984
- 30 pcs$6.33815
- Hlutanúmer:
- IXTH12N100
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 1000V 12A TO-247.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Single, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Díóða - Bríta leiðréttingar and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in IXYS IXTH12N100 electronic components. IXTH12N100 can be shipped within 24 hours after order. If you have any demands for IXTH12N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH12N100 Vörueiginleikar
Hlutanúmer :
IXTH12N100
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 1000V 12A TO-247
Röð :
MegaMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 6A, 10V
Vgs (th) (Max) @ kt :
4.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4000pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
300W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-247 (IXTH)
Pakki / mál :
TO-247-3
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