TSM60NB190CI C0G Verðlagning (USD) [32813stk lager]
- 1 pcs$1.25599
- Hlutanúmer:
- TSM60NB190CI C0G
- Framleiðandi:
- Taiwan Semiconductor Corporation
- Nákvæm lýsing:
- MOSFET N-CH 600V 18A ITO220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Díóða - leiðréttingar - fylki, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - RF, Díóða - RF and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Taiwan Semiconductor Corporation TSM60NB190CI C0G electronic components. TSM60NB190CI C0G can be shipped within 24 hours after order. If you have any demands for TSM60NB190CI C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB190CI C0G Vörueiginleikar
Hlutanúmer :
TSM60NB190CI C0G
Framleiðandi :
Taiwan Semiconductor Corporation
Lýsing :
MOSFET N-CH 600V 18A ITO220
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
18A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 6A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
1273pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
33.8W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
ITO-220AB
Pakki / mál :
TO-220-3 Full Pack, Isolated Tab
Nýjustu fréttir
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