BSO615CGHUMA1 Verðlagning (USD) [204538stk lager]
- 1 pcs$0.18083
- Hlutanúmer:
- BSO615CGHUMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N/P-CH 60V 3.1A/2A 8SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - mát, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Single and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSO615CGHUMA1 electronic components. BSO615CGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO615CGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO615CGHUMA1 Vörueiginleikar
Hlutanúmer :
BSO615CGHUMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Röð :
SIPMOS®
Hluti staða :
Active
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.1A, 2A
Rds On (Max) @ Id, Vgs :
110 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ kt :
2V @ 20µA
Hliðargjald (Qg) (Max) @ Vgs :
22.5nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
380pF @ 25V
Afl - Max :
2W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
PG-DSO-8
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