[2717stk lager]
- Hlutanúmer:
- H7N1002LSTL-E
- Framleiðandi:
- Renesas Electronics America
- Nákvæm lýsing:
- MOSFET N-CH 100V LDPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Díóða - Zener - Stakur, Thyristors - DIACs, SIDACs, Díóða - RF, Díóða - Bríta leiðréttingar, Thyristors - SCRs - mát, Díóða - breytileg getu and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Renesas Electronics America H7N1002LSTL-E electronic components. H7N1002LSTL-E can be shipped within 24 hours after order. If you have any demands for H7N1002LSTL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
H7N1002LSTL-E Vörueiginleikar
Hlutanúmer :
H7N1002LSTL-E
Framleiðandi :
Renesas Electronics America
Lýsing :
MOSFET N-CH 100V LDPAK
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
75A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 37.5A, 10V
Vgs (th) (Max) @ kt :
-
Hliðargjald (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
9700pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
100W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
4-LDPAK
Pakki / mál :
SC-83
Nýjustu fréttir
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