IPD031N06L3GATMA1 Verðlagning (USD) [81292stk lager]
- 1 pcs$0.48099
- Hlutanúmer:
- IPD031N06L3GATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 60V 100A TO252-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - RF, Smára - tvíhverfa (BJT) - fylki, Thyristors - DIACs, SIDACs, Díóða - breytileg getu, Thyristors - SCR, Transistors - IGBTs - Single and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPD031N06L3GATMA1 electronic components. IPD031N06L3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPD031N06L3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD031N06L3GATMA1 Vörueiginleikar
Hlutanúmer :
IPD031N06L3GATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 60V 100A TO252-3
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 93µA
Hliðargjald (Qg) (Max) @ Vgs :
79nC @ 4.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
13000pF @ 30V
FET lögun :
-
Dreifing orku (Max) :
167W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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