SI8900EDB-T2-E1 Verðlagning (USD) [54394stk lager]
- 1 pcs$0.71884
- 3,000 pcs$0.67285
- Hlutanúmer:
- SI8900EDB-T2-E1
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 5.4A 10-MFP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - RF, Díóða - Zener - Stakur, Díóða - Zener - Fylki, Thyristors - SCR and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI8900EDB-T2-E1 electronic components. SI8900EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8900EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8900EDB-T2-E1 Vörueiginleikar
Hlutanúmer :
SI8900EDB-T2-E1
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 20V 5.4A 10-MFP
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual) Common Drain
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.4A
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ kt :
1V @ 1.1mA
Hliðargjald (Qg) (Max) @ Vgs :
-
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
10-UFBGA, CSPBGA
Birgir tæki pakki :
10-Micro Foot™ CSP (2x5)
Nýjustu fréttir
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