[542stk lager]
- Hlutanúmer:
- SI2309DS-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 60V 1.25A SOT23-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Thyristors - SCR, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - leiðréttingar - fylki, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - RF and Transistors - sérstök tilgangur ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI2309DS-T1-E3 electronic components. SI2309DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2309DS-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2309DS-T1-E3 Vörueiginleikar
Hlutanúmer :
SI2309DS-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 60V 1.25A SOT23-3
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
-
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
340 mOhm @ 1.25A, 10V
Vgs (th) (Max) @ kt :
1V @ 250µA (Min)
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
1.25W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
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