IRFH8202TRPBF Verðlagning (USD) [123775stk lager]
- 1 pcs$0.29883
- 4,000 pcs$0.29747
- Hlutanúmer:
- IRFH8202TRPBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 25V 100A PQFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Smára - tvíhverfa (BJT) - fylki, Thyristors - SCR, Transistors - sérstök tilgangur, Díóða - RF, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFH8202TRPBF electronic components. IRFH8202TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8202TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8202TRPBF Vörueiginleikar
Hlutanúmer :
IRFH8202TRPBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 25V 100A PQFN
Röð :
HEXFET®, StrongIRFET™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
47A (Ta), 100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.05 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
2.35V @ 150µA
Hliðargjald (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
7174pF @ 13V
FET lögun :
-
Dreifing orku (Max) :
3.6W (Ta), 160W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-PQFN (5x6)
Pakki / mál :
8-PowerTDFN
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