Vishay Siliconix - SI2315BDS-T1-GE3

KEY Part #: K6416218

SI2315BDS-T1-GE3 Verðlagning (USD) [324558stk lager]

  • 1 pcs$0.11396
  • 3,000 pcs$0.10724

Hlutanúmer:
SI2315BDS-T1-GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET P-CH 12V 3A SOT23-3.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCR, Transistors - Forritanleg sameining, Transistors - IGBTs - mát, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - RF and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SI2315BDS-T1-GE3 electronic components. SI2315BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2315BDS-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2315BDS-T1-GE3 Vörueiginleikar

Hlutanúmer : SI2315BDS-T1-GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET P-CH 12V 3A SOT23-3
Röð : TrenchFET®
Hluti staða : Active
FET gerð : P-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 3A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 4.5V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 3.85A, 4.5V
Vgs (th) (Max) @ kt : 900mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 15nC @ 4.5V
Vgs (hámark) : ±8V
Inntaksrýmd (Ciss) (Max) @ Vds : 715pF @ 6V
FET lögun : -
Dreifing orku (Max) : 750mW (Ta)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : SOT-23-3 (TO-236)
Pakki / mál : TO-236-3, SC-59, SOT-23-3

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