Hlutanúmer :
IPD60R360P7ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 650V 9A TO252-3
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ kt :
4V @ 140µA
Hliðargjald (Qg) (Max) @ Vgs :
13nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
555pF @ 400V
Dreifing orku (Max) :
41W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO252-3
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63