SIHD2N80E-GE3 Verðlagning (USD) [139084stk lager]
- 1 pcs$0.26593
- Hlutanúmer:
- SIHD2N80E-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 800V 2.8A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHD2N80E-GE3 electronic components. SIHD2N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD2N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD2N80E-GE3 Vörueiginleikar
Hlutanúmer :
SIHD2N80E-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 800V 2.8A DPAK
Röð :
E
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.75 Ohm @ 1A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
19.6nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
315pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
62.5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D-PAK (TO-252AA)
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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