SI3458BDV-T1-E3 Verðlagning (USD) [239890stk lager]
- 1 pcs$0.15419
- 3,000 pcs$0.14509
- Hlutanúmer:
- SI3458BDV-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 60V 4.1A 6-TSOP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - RF, Díóða - Zener - Fylki, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI3458BDV-T1-E3 electronic components. SI3458BDV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3458BDV-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3458BDV-T1-E3 Vörueiginleikar
Hlutanúmer :
SI3458BDV-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 60V 4.1A 6-TSOP
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.1A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
350pF @ 30V
FET lögun :
-
Dreifing orku (Max) :
2W (Ta), 3.3W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
6-TSOP
Pakki / mál :
SOT-23-6 Thin, TSOT-23-6
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