[886stk lager]
- Hlutanúmer:
- IPB096N03LGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 35A TO-263-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - Tvíhverfur (BJT) - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Díóða - leiðréttingar - fylki, Thyristors - DIACs, SIDACs, Díóða - Bríta leiðréttingar and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB096N03LGATMA1 electronic components. IPB096N03LGATMA1 can be shipped within 24 hours after order. If you have any demands for IPB096N03LGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB096N03LGATMA1 Vörueiginleikar
Hlutanúmer :
IPB096N03LGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 35A TO-263-3
Röð :
OptiMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
35A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.6 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1600pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
42W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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