[12346stk lager]
- Hlutanúmer:
- STD8NM60N-1
- Framleiðandi:
- STMicroelectronics
- Nákvæm lýsing:
- MOSFET N-CH 600V 7A IPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Díóða - Zener - Fylki, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in STMicroelectronics STD8NM60N-1 electronic components. STD8NM60N-1 can be shipped within 24 hours after order. If you have any demands for STD8NM60N-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD8NM60N-1 Vörueiginleikar
Hlutanúmer :
STD8NM60N-1
Framleiðandi :
STMicroelectronics
Lýsing :
MOSFET N-CH 600V 7A IPAK
Röð :
MDmesh™ II
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (hámark) :
±25V
Inntaksrýmd (Ciss) (Max) @ Vds :
560pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
70W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I-PAK
Pakki / mál :
TO-251-3 Short Leads, IPak, TO-251AA
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