SQ1912EH-T1_GE3 Verðlagning (USD) [610452stk lager]
- 1 pcs$0.06059
- 3,000 pcs$0.05168
- Hlutanúmer:
- SQ1912EH-T1_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2 N-CH 20V 800MA SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - breytileg getu, Transistors - JFETs, Thyristors - TRIACs, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Single and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQ1912EH-T1_GE3 electronic components. SQ1912EH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912EH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1912EH-T1_GE3 Vörueiginleikar
Hlutanúmer :
SQ1912EH-T1_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2 N-CH 20V 800MA SC70-6
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
800mA (Tc)
Rds On (Max) @ Id, Vgs :
280 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
1.15nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
75pF @ 10V
Afl - Max :
1.5W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-TSSOP, SC-88, SOT-363
Birgir tæki pakki :
SC-70-6
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