[3278stk lager]
- Hlutanúmer:
- IXTD4N80P-3J
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 800.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - JFETs, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Díóða - Zener - Stakur, Díóða - Zener - Fylki and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in IXYS IXTD4N80P-3J electronic components. IXTD4N80P-3J can be shipped within 24 hours after order. If you have any demands for IXTD4N80P-3J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD4N80P-3J Vörueiginleikar
Hlutanúmer :
IXTD4N80P-3J
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 800
Röð :
PolarHV™
Hluti staða :
Last Time Buy
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ kt :
5.5V @ 100µA
Hliðargjald (Qg) (Max) @ Vgs :
14.2nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
750pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
100W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
Die
Pakki / mál :
Die
Nýjustu fréttir
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