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- Hlutanúmer:
- BUK7E1R6-30E,127
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 30V 120A I2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Smára - tvíhverfa (BJT) - fylki, Díóða - Zener - Stakur, Thyristors - SCR, Díóða - breytileg getu, Transistors - IGBTs - mát and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. BUK7E1R6-30E,127 electronic components. BUK7E1R6-30E,127 can be shipped within 24 hours after order. If you have any demands for BUK7E1R6-30E,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK7E1R6-30E,127 Vörueiginleikar
Hlutanúmer :
BUK7E1R6-30E,127
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 30V 120A I2PAK
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 25A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
154nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
11960pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
349W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I2PAK
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
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