[869stk lager]
- Hlutanúmer:
- IXFV12N120P
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 1200V 12A PLUS220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, Díóða - RF, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Single and Díóða - Zener - Stakur ...
- Samkeppnisforskot:
- We specialize in IXYS IXFV12N120P electronic components. IXFV12N120P can be shipped within 24 hours after order. If you have any demands for IXFV12N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFV12N120P Vörueiginleikar
Hlutanúmer :
IXFV12N120P
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 1200V 12A PLUS220
Röð :
HiPerFET™, PolarP2™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.35 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
6.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
103nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
5400pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
543W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PLUS220
Pakki / mál :
TO-220-3, Short Tab
Nýjustu fréttir
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