TK65G10N1,RQ Verðlagning (USD) [71903stk lager]
- 1 pcs$0.60117
- 1,000 pcs$0.59818
- Hlutanúmer:
- TK65G10N1,RQ
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N-CH 100V 65A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - Tvíhverfur (BJT) - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - sérstök tilgangur, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Kerfisstjóratæki and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TK65G10N1,RQ electronic components. TK65G10N1,RQ can be shipped within 24 hours after order. If you have any demands for TK65G10N1,RQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK65G10N1,RQ Vörueiginleikar
Hlutanúmer :
TK65G10N1,RQ
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 100V 65A D2PAK
Röð :
U-MOSVIII-H
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
65A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 32.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5400pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
156W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D2PAK
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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