IPG20N10S4L22AATMA1 Verðlagning (USD) [116120stk lager]
- 1 pcs$0.31853
- 5,000 pcs$0.26582
- Hlutanúmer:
- IPG20N10S4L22AATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 100V 20A TDSON-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Arrays, Transistors - sérstök tilgangur, Transistors - IGBTs - Arrays, Kerfisstjóratæki, Smára - tvíhverfa (BJT) - fylki, Transistors - Forritanleg sameining and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPG20N10S4L22AATMA1 electronic components. IPG20N10S4L22AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L22AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L22AATMA1 Vörueiginleikar
Hlutanúmer :
IPG20N10S4L22AATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 100V 20A TDSON-8
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 17A, 10V
Vgs (th) (Max) @ kt :
2.1V @ 25µA
Hliðargjald (Qg) (Max) @ Vgs :
27nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1755pF @ 25V
Afl - Max :
60W
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerVDFN
Birgir tæki pakki :
PG-TDSON-8-10
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