[1444stk lager]
- Hlutanúmer:
- SI5406DC-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 12V 6.9A 1206-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Transistors - JFETs, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - breytileg getu, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI5406DC-T1-GE3 electronic components. SI5406DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5406DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5406DC-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI5406DC-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 12V 6.9A 1206-8
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6.9A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 6.9A, 4.5V
Vgs (th) (Max) @ kt :
600mV @ 1.2mA (Min)
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 4.5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
-
Dreifing orku (Max) :
1.3W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
1206-8 ChipFET™
Pakki / mál :
8-SMD, Flat Lead
Nýjustu fréttir
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