BSG0810NDIATMA1 Verðlagning (USD) [83416stk lager]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Hlutanúmer:
- BSG0810NDIATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Forritanleg sameining, Díóða - leiðréttingar - stakir, Thyristors - TRIACs, Thyristors - SCRs - mát, Transistors - sérstök tilgangur, Thyristors - DIACs, SIDACs and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Vörueiginleikar
Hlutanúmer :
BSG0810NDIATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 25V 19A/39A 8TISON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual) Asymmetrical
FET lögun :
Logic Level Gate, 4.5V Drive
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
19A, 39A
Rds On (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
1040pF @ 12V
Afl - Max :
2.5W
Vinnuhitastig :
-55°C ~ 155°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerTDFN
Birgir tæki pakki :
PG-TISON-8
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