FF8MR12W2M1B11BOMA1 Verðlagning (USD) [380stk lager]
- 1 pcs$122.02780
- Hlutanúmer:
- FF8MR12W2M1B11BOMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET MODULE 1200V 150A.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Díóða - RF, Transistors - Tvíhverfur (BJT) - Single and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies FF8MR12W2M1B11BOMA1 electronic components. FF8MR12W2M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FF8MR12W2M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF8MR12W2M1B11BOMA1 Vörueiginleikar
Hlutanúmer :
FF8MR12W2M1B11BOMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET MODULE 1200V 150A
Röð :
CoolSiC™
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Silicon Carbide (SiC)
Afrennsli að uppspennu (Vdss) :
1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
150A (Tj)
Rds On (Max) @ Id, Vgs :
7.5 mOhm @ 150A, 15V (Typ)
Vgs (th) (Max) @ kt :
5.55V @ 60mA
Hliðargjald (Qg) (Max) @ Vgs :
372nC @ 15V
Inntaksrýmd (Ciss) (Max) @ Vds :
11000pF @ 800V
Afl - Max :
20mW (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Chassis Mount
Pakki / mál :
Module
Birgir tæki pakki :
AG-EASY2BM-2
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