SIHH24N65E-T1-GE3 Verðlagning (USD) [24024stk lager]
- 1 pcs$1.72398
- 3,000 pcs$1.71541
- Hlutanúmer:
- SIHH24N65E-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 650V 23A POWERPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - breytileg getu, Transistors - JFETs, Díóða - RF, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHH24N65E-T1-GE3 electronic components. SIHH24N65E-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH24N65E-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHH24N65E-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIHH24N65E-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 650V 23A POWERPAK
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
23A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
150 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
116nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
2814pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
202W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® 8 x 8
Pakki / mál :
8-PowerTDFN
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