SI4900DY-T1-GE3 Verðlagning (USD) [168688stk lager]
- 1 pcs$0.22036
- 2,500 pcs$0.21927
- Hlutanúmer:
- SI4900DY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 60V 5.3A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar, Kerfisstjóratæki and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4900DY-T1-GE3 electronic components. SI4900DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4900DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4900DY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4900DY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 60V 5.3A 8-SOIC
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.3A
Rds On (Max) @ Id, Vgs :
58 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
665pF @ 15V
Afl - Max :
3.1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
Nýjustu fréttir
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