SIA413DJ-T1-GE3 Verðlagning (USD) [211203stk lager]
- 1 pcs$0.17513
- 3,000 pcs$0.16445
- Hlutanúmer:
- SIA413DJ-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 12V 12A SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - JFETs, Díóða - Bríta leiðréttingar, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - stakir, Díóða - Zener - Stakur, Smára - tvíhverfa (BJT) - fylki, forspeglast and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIA413DJ-T1-GE3 electronic components. SIA413DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA413DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA413DJ-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIA413DJ-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 12V 12A SC70-6
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
29 mOhm @ 6.7A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
57nC @ 8V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
1800pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
3.5W (Ta), 19W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SC-70-6 Single
Pakki / mál :
PowerPAK® SC-70-6
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