Framleiðandi :
STMicroelectronics
Lýsing :
MOSFET N-CH 1.2KV TO247-3
Tækni :
SiCFET (Silicon Carbide)
Afrennsli að uppspennu (Vdss) :
1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
690 mOhm @ 6A, 20V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
22nC @ 20V
Vgs (hámark) :
+25V, -10V
Inntaksrýmd (Ciss) (Max) @ Vds :
290pF @ 400V
Dreifing orku (Max) :
150W (Tc)
Vinnuhitastig :
-55°C ~ 200°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
HiP247™