SI4200DY-T1-GE3 Verðlagning (USD) [367832stk lager]
- 1 pcs$0.10056
- 2,500 pcs$0.09462
- Hlutanúmer:
- SI4200DY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 25V 8A 8SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Díóða - Zener - Fylki, Thyristors - SCR, Transistors - FETs, MOSFETs - Single, Kerfisstjóratæki, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Stakur and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4200DY-T1-GE3 electronic components. SI4200DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4200DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4200DY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4200DY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 25V 8A 8SOIC
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
415pF @ 13V
Afl - Max :
2.8W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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