[2595stk lager]
- Hlutanúmer:
- IPU80R2K8CEBKMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 800V 1.9A TO251-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Díóða - Bríta leiðréttingar, Transistors - Forritanleg sameining, Thyristors - SCRs - mát, Thyristors - DIACs, SIDACs, Thyristors - SCR, Díóða - Zener - Stakur and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPU80R2K8CEBKMA1 electronic components. IPU80R2K8CEBKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R2K8CEBKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU80R2K8CEBKMA1 Vörueiginleikar
Hlutanúmer :
IPU80R2K8CEBKMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 800V 1.9A TO251-3
Röð :
CoolMOS™
Hluti staða :
Discontinued at Digi-Key
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.9A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ kt :
3.9V @ 120µA
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
290pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
42W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO251-3
Pakki / mál :
TO-251-3 Short Leads, IPak, TO-251AA
Nýjustu fréttir
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