[13765stk lager]
- Hlutanúmer:
- IRF7807D1PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 30V 8.3A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Díóða - Zener - Fylki, Thyristors - SCR, Transistors - IGBTs - Single, Transistors - sérstök tilgangur, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF7807D1PBF electronic components. IRF7807D1PBF can be shipped within 24 hours after order. If you have any demands for IRF7807D1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807D1PBF Vörueiginleikar
Hlutanúmer :
IRF7807D1PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 30V 8.3A 8-SOIC
Röð :
FETKY™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8.3A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
17nC @ 5V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
Schottky Diode (Isolated)
Dreifing orku (Max) :
2.5W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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