[2458stk lager]
- Hlutanúmer:
- TK12V60W,LVQ
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N CH 600V 11.5A 5DFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - RF, Díóða - Zener - Fylki, Transistors - IGBTs - Arrays, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TK12V60W,LVQ electronic components. TK12V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK12V60W,LVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12V60W,LVQ Vörueiginleikar
Hlutanúmer :
TK12V60W,LVQ
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N CH 600V 11.5A 5DFN
Röð :
DTMOSIV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11.5A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ kt :
3.7V @ 600µA
Hliðargjald (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
890pF @ 300V
FET lögun :
Super Junction
Dreifing orku (Max) :
104W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
4-DFN-EP (8x8)
Pakki / mál :
4-VSFN Exposed Pad
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